Circular dichroism (CD) is extensively used in various material systems for applications including biological detection, enantioselective catalysis, and chiral separation. This paper introduces a chiral absorptive metasurface that exhibits a circular polarization-selective effect in dual bands—positive and negative CD peaks at short wavelengths and long wavelengths, respectively. Significantly, we uncover that this phenomenon extends beyond the far-field optical response, as it is also observed in the photothermal effect and the dynamics of thermally induced fluid motion. By carefully engineering the metasurface design, we achieve two distinct CD signals with high g factors (∼1) at the wavelengths of 877 nm and 1045 nm, respectively. The findings presented in this study advance our comprehension of CD and offer promising prospects for enhancing chiral light–matter interactions in the domains of nanophotonics and optofluidics.

Thermo-plasmonics, using plasmonic structures as heat sources, has been widely used in biomedical and microfluidic applications. However, a metasurface with single-element unit cells, considered as the sole heat source in a unit cell, functions at a fixed wavelength and has limited control over the thermo-plasmonically induced hydrodynamic effects. Plasmonic metasurfaces with metal disk heterodimer lattices can be viewed to possess two heat sources within a unit cell and are therefore designed to photo-actively control thermal distributions and fluid dynamics at the nanoscale. The locations of heat sources can be switched, and the direction of the convective flow in the central region of the unit cell can be reversed by shifting the wavelength of the excitation source without any change in the excitation direction or physical actuation of the structural elements. The temperature and velocity of a fluid are spatiotemporally controlled by the wavelength selectivity and polarization sensitivity of the plasmonic metasurface. Additionally, we investigate the effects of geometric parameters on the surface lattice resonances and their impact on the temperature and fluid velocity of the optofluidic system. Our results demonstrate excellent optical control of these plasmonic metasurface heating and thermal convection performances to design flexible platforms for microfluidics.

The integration of a single III-V semiconductor quantum dot with a plasmonic nanoantenna as a means toward efficient single-photon sources (SPEs) is limited due to its weak, wide-angle emission, and low emission rate. These limitations can be overcome by designing a unique linear array of plasmonic antenna structures coupled to nanowire-based quantum dot (NWQD) emitters. A linear array of a coupled device composed of multiple plasmonic antennas at an optimum distance from the quantum dot emitter can be designed to enhance the directionality and the spontaneous emission rate of an integrated single-photon emitter. Finite element modeling has been used to design these compact structures with high quantum efficiencies and directionality of single-photon emission while retaining the advantages of NWQDs. The Purcell enhancement factor of these structures approaches 66.1 and 145.8, respectively. Compared to a single NWQD of the same diameter, the fluorescence was enhanced by 1054 and 2916 times. The predicted collection efficiencies approach 85% (numerical aperture, NA=0.5) and 80% (NA=0.5), respectively. Unlike single-photon emitters based on bulky conventional optics, this is a unique nanophotonic single-emission photon source based on a line-array configuration that uses a surface plasmon-enhanced design with minimum dissipation. The designs presented in this work will facilitate the development of SPEs with potential integration with semiconductor optoelectronics.

The field of chiral plasmonics has registered considerable progress with machine-learning (ML)-mediated metamaterial prototyping, drawing from the success of ML frameworks in other applications such as pattern and image recognition. Here, we present an end-to-end functional bidirectional deep-learning (DL) model for three-dimensional chiral metamaterial design and optimization. This ML model utilizes multitask joint learning features to recognize, generalize, and explore in detail the nontrivial relationship between the metamaterials’ geometry and their chiroptical response, eliminating the need for auxiliary networks or equivalent approaches to stabilize the physically relevant output. Our model efficiently realizes both forward and inverse retrieval tasks with great precision, offering a promising tool for iterative computational design tasks in complex physical systems. Finally, we explore the behavior of a sample ML-optimized structure in a practical application, assisting the sensing of biomolecular enantiomers. Other potential applications of our metastructure include photodetectors, polarization-resolved imaging, and circular dichroism (CD) spectroscopy, with our ML framework being applicable to a wider range of physical problems.

Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMDs) interfaced to gallium nitride (GaN) are excellent material systems to realize broadband light absorbers and emitters due to their close proximity in the lattice constants. The surface properties of a polar semiconductor such as GaN are dominated by interface phonons, and thus the optical properties of the vertical heterostructure are influenced by the coupling of these carriers with phonons. The activation of different Raman modes in the heterostructure caused by the coupling between interfacial phonons and optically generated carriers in a monolayer MoS2–GaN (0001) heterostructure is observed. Different excitonic states in MoS2 are close to the interband energy state of intraband defect state of GaN. Density functional theory (DFT) calculations are performed to determine the band alignment of the interface and revealed a type-I heterostructure. The close proximity of the energy levels and the excitonic states in the semiconductors and the coupling of the electronic states with phonons result in the modification of carrier relaxation rates. Modulation of the excitonic absorption states in MoS2 is measured by transient optical pump-probe spectroscopy and the change in emission properties of both semiconductors is measured by steady-state photoluminescence (PL) emission spectroscopy. There is significant red-shift of the C excitonic band and faster dephasing of carriers in MoS2. However, optical excitation at energy higher than the bandgap of both semiconductors slows down the dephasing of carriers and energy exchange at the interface. Enhanced and blue-shifted PL emission is observed in MoS2. GaN band-edge emission is reduced in intensity at room temperature due to increased phonon-induced scattering of carriers in the GaN layer. Our results demonstrate the relevance of interface coupling between the semiconductors for the development of optical and electronic applications.